2N6582

Single Bipolar Transistors Overview

The Microchip Technology 2N6582 is a silicon N-channel Junction Field-Effect Transistor (JFET) designed for high-reliability applications. It features a TO-18 metal can package with three leads, supporting through-hole mounting. The device operates with an N-channel configuration and is constructed using silicon technology. Key electrical characteristics include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of 30 V, and a continuous drain current of 175 mA. The component has a power dissipation rating of 1.8 W and a maximum operating temperature of +200°C, with a minimum operating temperature of -65°C.

Single Bipolar Transistors Feature Summary

• High-temperature operation capability up to +200°C
• Radiation-hardened design suitable for space environments
• Metal can package for robust mechanical protection

Single Bipolar Transistors Applications

• Spacecraft electronic systems
• Military avionics circuits
• High-reliability analog signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and radiation hardness qualification status directly with Microchip Technology or authorized distributors before procurement. Ensure that the ordering information matches the required performance specifications for the intended mission profile. Confirm compliance with relevant military standards such as MIL-PRF-19500 if applicable to the system requirements.

Single Bipolar Transistors Selection Notes

Select this component when high reliability and radiation tolerance are critical requirements. Consider the TO-18 package constraints for PCB layout and thermal management. Evaluate the 175 mA current limit and 1.8 W power dissipation against circuit demands. Compare against other JFETs in the family for pin compatibility and parameter variations.

Single Bipolar Transistors Part Context

The 2N6582 belongs to Microchip's portfolio of radiation-hardened discrete semiconductors. These components are manufactured under strict quality controls to meet aerospace and defense standards. The product line focuses on providing stable performance in harsh environments where standard commercial parts would fail due to radiation effects or extreme temperatures.

Single Bipolar Transistors Replacement Considerations

Check for direct cross-reference part numbers from Microchip's qualified substitute list. Verify that any alternative JFET meets the same radiation hardness levels and temperature range. Ensure pinout compatibility and electrical parameters match or exceed the original specifications.