2N6583

Single Bipolar Transistors Overview

The Microchip Technology 2N6583 is a silicon NPN power bipolar junction transistor housed in a TO-3 package. It features a collector-emitter sustaining voltage of 400V minimum and supports a continuous collector current of 10A. The device is designed for high-power applications with a maximum power dissipation capability of 125W under specified thermal conditions. Key electrical characteristics include a base-emitter breakdown voltage of 9V and a collector-base breakdown voltage of 700V. The component utilizes a through-hole mounting type and is classified as a single discrete semiconductor product within the bipolar transistor category.

Single Bipolar Transistors Feature Summary

• High voltage blocking capability with 400V collector-emitter sustaining voltage
• Robust current handling suitable for power switching applications
• Excellent safe operating area performance for reliable operation
• Durable TO-3 metal can package for effective heat dissipation

Single Bipolar Transistors Applications

• Audio amplifier output stages
• Switching circuits requiring high voltage isolation
• Current-controlling elements in feedback loops
• Power supply regulation systems

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking matches Microchip Technology specifications to ensure authenticity. Confirm the TO-3 package dimensions align with your PCB or chassis layout requirements. Check datasheet revisions for any updates to electrical limits. Ensure thermal management solutions meet the 125W dissipation needs. Validate that the sourcing channel provides original components with traceable documentation.

Single Bipolar Transistors Selection Notes

Choose this component when high voltage withstand and substantial current capacity are required in a ruggedized package. The TO-3 form factor suits applications needing superior thermal performance compared to plastic packages. Consider the 400V rating for mains-connected or high-potential circuits. Evaluate thermal resistance parameters against your heatsinking strategy. This transistor is appropriate for legacy designs or industrial equipment requiring proven, high-reliability discrete power devices.

Single Bipolar Transistors Part Context

The 2N6583 belongs to the family of silicon NPN power transistors manufactured by Microchip Technology. It is categorized under discrete semiconductor products specifically as a single bipolar junction transistor. The part is commonly referenced in electronic circuit design for power handling tasks. Its designation follows standard military-style numbering conventions often adopted for robust industrial components.

Single Bipolar Transistors Replacement Considerations

Consult official Microchip Technology substitution guides for verified equivalent part numbers. Cross-reference electrical parameters such as Vceo, Ic, and package style before swapping. Generic replacements may not match the specific safe operating area characteristics. Verify pinout compatibility if using alternative manufacturers' equivalents.