2N6660JTVP02

$142.38

Description：MOSFET N-CH 60V 990MA TO205AD
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:68d739e01d60 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 990MA TO205AD
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Military
Qualification：MIL-PRF-19500
Mounting Type：Through Hole
Supplier Device Package：TO-205AD (TO-39)
Package / Case：TO-205AD, TO-39-3 Metal Can

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2N6660JTVP02

Overview

The Vishay Siliconix 2N6660JTVP02 is a military-qualified N-channel power MOSFET housed in the TO-205AD (TO-39) package. It features a Drain-Source Voltage of 60 V and a maximum On-State Resistance of 3 Ohms at VGS = 10 V. The device operates with a Gate-Source Voltage range of ±20 V, supports a continuous drain current of 0.99 A at 25 °C case temperature, and dissipates up to 6.25 W. It includes an internal body diode with a forward voltage of 1.6 V maximum.

Feature Summary

Military-grade qualification for high-reliability applications
Low on-resistance for efficient power handling
Fast switching speed suitable for high-speed circuits
Direct logic-level interface capability

Applications

High-reliability systems
Solid-state relays
Battery-operated systems
Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors

Procurement Notes

Verify that the ordering suffix JTVP02 corresponds to the JANTXV2N6660P variant with PIND screening as documented in the official Vishay Siliconix datasheet. Confirm package type and lead configuration match project requirements before procurement.

Selection Notes

Select this component for applications requiring military-grade reliability and fast switching performance. Ensure thermal management accommodates the specified junction-to-case resistance. Validate gate drive levels against the threshold voltage specifications for optimal conduction.

Part Context

This part belongs to the Vishay Siliconix 2N6660 family of N-channel 60 V MOSFETs. It is designed for use in harsh environments where guaranteed reliability and low offset voltage are critical. The family includes commercial and various military-qualified variants.

Replacement Considerations

Compatible substitutes include 2N6660JTXP02 and other JANTXV2N6660 variants within the same family. Verify pinout and electrical parameters match before substitution.