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Product Detailed Parameters
- Description：MOSFET N-CH 200V 100A TO-247
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：153 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8242 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The AM100N20-40FP is an N-Channel MOSFET manufactured by Analog Power Inc. It features a Drain-to-Source Voltage (Vdss) of 200 V and a Continuous Drain Current (Id) of 100 A at 25°C case temperature. The device utilizes low rDS(on) trench technology to minimize conduction losses. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20 V and a typical threshold voltage (Vgs(th)) ranging from 2 V to 4 V. The component is housed in a TO-263 (D2Pak) package, designed for high-power applications requiring efficient thermal management and fast switching speeds.
Feature Summary
- Low on-resistance trench technology for enhanced efficiency
- Fast switching speed capabilities
- Low thermal impedance design
Applications
- Hot swapping circuits
- High-side load switches
- DC-DC converters
Procurement Notes
Verify the exact datasheet revision and ordering suffix when sourcing. Confirm that the TO-263 package dimensions match your PCB footprint requirements. Ensure thermal interface materials are compatible with the exposed pad design for optimal heat dissipation during operation.
Selection Notes
Select this component for applications requiring 200 V blocking capability and high current handling up to 100 A. Consider the thermal resistance values provided in the datasheet to determine appropriate heatsinking solutions. Evaluate the gate charge specifications against your driver capabilities to ensure adequate switching performance.
Part Context
This part belongs to Analog Power's portfolio of N-Channel MOSFETs designed for power management solutions. The manufacturer offers various packages including DFN and SO types, with some devices featuring on-resistance as low as 1 mΩ. This specific model targets applications needing robust voltage ratings and high current capacity.
Replacement Considerations
Check for direct equivalents with matching Vdss, Id, and package type. Verify pinout compatibility before substitution. Review thermal and electrical parameters to ensure the replacement meets or exceeds the original design requirements.
