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The Vishay Siliconix 2N6660JTXP02 is a military-qualified N-channel enhancement-mode MOSFET housed in a TO-205AD (TO-39) package. It features a Drain-Source Voltage of 60 V and a continuous drain current of 0.99 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 3 Ω at VGS = 10 V, with a typical gate-source threshold voltage of 1.7 V. Maximum power dissipation reaches 6.25 W at 25 °C case temperature. Operating junction temperatures range from -55 °C to +150 °C.
Verify the specific ordering suffix P02 indicates inclusion of Positive Ion Neutralization Device (PIND) testing as documented in the manufacturer's ordering information table. Confirm that the component meets all required military specifications and environmental standards before finalizing procurement. Ensure compatibility with existing TO-205AD (TO-39) mounting configurations.
Select this component when military qualification and high reliability are mandatory requirements. The TO-205AD package suits through-hole mounting needs. Evaluate thermal management strategies carefully, as the maximum power dissipation is limited by the junction-to-case thermal resistance. Verify that the 60 V drain-source voltage rating aligns with the circuit's peak operating conditions.
This part belongs to the Vishay Siliconix 2N6660 family of N-channel 60 V MOSFETs. The JANTX designation signifies a specific military grade within this series. Other variants include commercial versions and lead-free options. The TO-205AD package provides a standardized footprint for legacy and specialized electronic designs requiring robust discrete semiconductor components.
Consult the official datasheet for direct substitute part numbers. Cross-reference pinouts and electrical parameters to ensure functional equivalence. Verify that any replacement maintains the required military qualification level and package dimensions.