2N6661-E3

$25.50

Description：MOSFET N-CH 90V 860MA TO39
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:b8993b8badb5 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 90V 860MA TO39
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：90 V
Current - Continuous Drain (Id) @ 25°C：860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-39
Package / Case：TO-205AD, TO-39-3 Metal Can

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2N6661-E3

Overview

The Vishay Siliconix 2N6661-E3 is a military-qualified N-channel 90 V (D-S) MOSFET housed in a TO-205AD (TO-39) package. It features a low on-resistance of 3.6 Ω at VGS = 10 V and a low threshold voltage of 1.6 V. The device exhibits low input capacitance of 35 pF and fast switching speeds with turn-on and turn-off times of 6 ns and 8 ns respectively. Absolute maximum ratings include a drain-source voltage of 90 V, gate-source voltage of ±20 V, continuous drain current of 0.86 A at TC = 25 °C, and power dissipation of 6.25 W at TC = 25 °C.

Feature Summary

Military qualified for guaranteed reliability
Low on-resistance and low threshold voltage
Fast switching speed with low input capacitance
Direct logic-level interface capability

Applications

Hi-Rel Systems
Solid-State Relays
Battery Operated Systems
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors

Procurement Notes

Verify the specific revision status of the datasheet S11-1542-Rev. D before finalizing designs. Confirm that the TO-205AD package dimensions align with your mechanical constraints. Ensure thermal management strategies account for the specified junction-to-ambient and junction-to-case thermal resistances under expected operating conditions.

Selection Notes

Select this component when military qualification and high reliability are required for N-channel MOSFET applications. Consider its low threshold voltage for direct TTL/CMOS interfacing without buffer stages. Evaluate the 90 V drain-source voltage rating against circuit requirements to ensure adequate headroom for transient voltages.

Part Context

The 2N6661-E3 belongs to the 2N6661 family of N-channel MOSFETs manufactured by Vishay Siliconix. It is specifically designed for high-reliability environments, offering military-grade performance characteristics. The -E3 suffix indicates lead-free construction, adhering to environmental compliance standards while maintaining the electrical specifications of the standard 2N6661 device.