2N6661

$25.50

Description：MOSFET N-CH 90V 860MA TO39
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:a3019b0f7eef Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 90V 860MA TO39
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：90 V
Current - Continuous Drain (Id) @ 25°C：860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-39
Package / Case：TO-205AD, TO-39-3 Metal Can

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2N6661

Overview

The Vishay Siliconix 2N6661 is a military-qualified N-channel silicon MOSFET housed in a TO-205AD (TO-39) metal can package. It features a drain-source breakdown voltage of 90 V and a continuous drain current rating of 0.86 A at 25 °C case temperature. The device exhibits a low on-state resistance of 4 Ω at VGS = 10 V and a gate threshold voltage typically around 1.6 V, enabling direct logic-level interface compatibility with TTL and CMOS circuits. Key dynamic parameters include an input capacitance of 35 pF and fast switching times of approximately 6 ns for turn-on.

Feature Summary

Military qualified for high-reliability applications
Low on-resistance and low threshold voltage for efficient operation
Fast switching speed suitable for high-speed circuits
Direct logic-level interface capability without buffer requirements

Applications

High-reliability systems
Solid-state relays
Battery-operated systems
Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors

Procurement Notes

Verify the specific ordering suffix to confirm the exact qualification level and lead finish. Standard commercial versions are available as 2N6661 or 2N6661-E3. Military variants such as 2N6661JANTX and 2N6661JANTXV require confirmation of gold lead availability and soldering options. Ensure compliance with the -2 flow document if that specific variant is required. Always validate datasheet specifications against the final component marking.

Selection Notes

Select this component when a ruggedized, hermetically sealed N-channel MOSFET is required for harsh environments. The TO-205AD package provides superior thermal dissipation compared to plastic packages, supporting up to 6.25 W power dissipation at 25 °C case temperature. Consider the 4 Ω on-resistance for low-voltage drop applications and verify that the 90 V drain-source voltage meets the circuit's maximum operating requirements.

Part Context

This part belongs to the Vishay Siliconix family of small-signal field-effect transistors designed for robust performance. The 2N6661 utilizes enhancement mode technology within a cylindrical metal package. It is distinct from surface-mount devices due to its through-hole construction and dedicated thermal tab connection, which facilitates effective heat transfer to the mounting substrate.