2N6661JTX02

$323.85

Description：MOSFET N-CH 90V 860MA TO39
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:eb5783f4ad3f Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 90V 860MA TO39
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：90 V
Current - Continuous Drain (Id) @ 25°C：860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Military
Qualification：MIL-PRF-19500
Mounting Type：Through Hole
Supplier Device Package：TO-39
Package / Case：TO-205AD, TO-39-3 Metal Can

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2N6661JTX02

Overview

The Vishay Siliconix 2N6661JTX02 is a military-qualified N-channel silicon MOSFET housed in the TO-205AD (TO-39) package. It features a drain-source voltage of 90 V and a gate-source voltage rating of ±20 V. The device provides a maximum on-resistance of 4 Ω at VGS = 10 V and a threshold voltage typically around 1.6 V. With an input capacitance of 35 pF, it supports fast switching speeds of approximately 6 ns turn-on time. Continuous drain current reaches 0.86 A at 25 °C case temperature.

Feature Summary

Military qualified for high-reliability applications
Low offset voltage and low error voltage characteristics
Fast switching speed with low input capacitance
Direct logic-level interface capability without buffer

Applications

High-reliability systems
Solid-state relays
Battery-operated systems
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify that the specific ordering suffix JTX02 corresponds to the JANTX2N6661 variant with standard gold leads as defined in the official Vishay datasheet. Confirm compliance with all military specifications and environmental requirements relevant to your deployment. Ensure proper handling procedures are followed due to the TO-205AD metal can packaging. Validate component authenticity through authorized distribution channels.

Selection Notes

Select this component when military qualification and high reliability are required for N-channel switching applications. The TO-205AD package suits designs needing robust thermal dissipation via the metal case. Consider the 90 V breakdown voltage and 0.86 A continuous current limits for circuit design. Evaluate the low threshold voltage for compatibility with TTL/CMOS drivers in direct logic-level interface scenarios.

Part Context

This part belongs to the Vishay Siliconix 2N6661 family of N-channel 90 V MOSFETs. The JTX02 suffix specifically denotes the JANTX2N6661 configuration featuring standard gold leads. This variant is distinct from commercial versions like the 2N6661-E3 or other leaded options such as JANTXV variants. It is designed for environments requiring stringent performance standards.