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Product Detailed Parameters
- Description：MOSFET N-CH 90V 860MA TO39
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：90 V
- Current - Continuous Drain (Id) @ 25°C：860mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Military
- Qualification：MIL-PRF-19500
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AD, TO-39-3 Metal Can
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Overview
The Vishay Siliconix 2N6661JTXP02 is a military-qualified N-channel power MOSFET housed in a sealed TO-205AD (TO-39) package. It features a Drain-Source Voltage of 90 V and a maximum On-State Resistance of 4 Ω at VGS = 10 V. The device operates within a junction temperature range of -55 °C to +150 °C, with a continuous drain current of 0.86 A at TC = 25 °C. Key electrical characteristics include a Gate-Source Threshold Voltage of 1.6 V typical, Input Capacitance of 35 pF, and switching times of 6 ns turn-on and 8 ns turn-off.
Feature Summary
- Military qualification compliant with MIL-PRF-19500 standards for high reliability
- Low on-resistance and low threshold voltage enabling direct logic-level interface
- Fast switching speed suitable for high-speed circuit applications
- Sealed metal can package providing environmental protection
Applications
- High-reliability military systems
- Direct logic-level interface circuits
- Solid-state relays
- Battery-operated systems
Procurement Notes
Verify the specific ordering suffix JTXP02 corresponds to the JANTX2N6661P variant with Physical Inspection of New Devices (PIND). Confirm that the component meets the required screening levels defined by DSCC. Ensure the TO-205AD package dimensions align with the target PCB or chassis mounting constraints. Validate that the military grade qualification is explicitly stated for the delivered lot.
Selection Notes
Select this component when a hermetically sealed N-channel MOSFET is required for harsh environments. The 90 V rating and 4 Ω resistance suit low-power switching tasks. The TO-39 package facilitates through-hole mounting. Consider the thermal resistance of 20 °C/W for heat dissipation calculations. Verify compatibility with TTL/CMOS drive voltages due to the low threshold specification.
Part Context
This part belongs to the Vishay Siliconix 2N6661 family of N-channel power MOSFETs. It shares core electrical specifications with commercial variants like the 2N6661 but undergoes rigorous screening to meet military standards. The JANTX designation indicates a specific quality level within the military product line, distinguished from standard commercial or lower-grade military options.
Replacement Considerations
Substitutes must match the 90 V rating, TO-205AD package, and military qualification. Check datasheets for equivalent RDS(on) and switching speeds. Verify pinout compatibility for Drain, Gate, and Source terminals.
