Single Bipolar Transistors 2N6668 PBFREE product image

2N6668 PBFREE

$1.12
  • Description:10A 80V TH TRANSISTOR-BIPOLAR PO
  • Series:-

SKU:109a3bcd0903 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2N6668 PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 10A 80V TH TRANSISTOR-BIPOLAR PO. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6668 PBFREE

  • Description:10A 80V TH TRANSISTOR-BIPOLAR PO
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 10mA, 5A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A, 3V
  • Power - Max:-
  • Frequency - Transition:20MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6668 PBFREE

2N6668 PBFREE

Single Bipolar Transistors Overview

The 2N6668 PBFREE is a silicon PNP power Darlington transistor manufactured by Central Semiconductor Corp. It features an 80V collector-emitter breakdown voltage and a maximum continuous collector current of 10A. The device operates with a minimum DC current gain (hFE) of 100 and has a transition frequency of 20MHz. Packaged in a TO-220AB flange mount configuration, it supports a maximum operating temperature of 150°C and dissipates up to 65W of power. The component includes built-in diode and resistor configurations for switching applications.

Single Bipolar Transistors Feature Summary

  • PNP polarity silicon construction
  • Darlington internal structure
  • Flange mount thermal management

Single Bipolar Transistors Applications

  • Power switching circuits
  • High-current load control
  • Amplifier output stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as STMicroelectronics also lists this part number. Confirm lifecycle status, as some distributors indicate scheduled obsolescence. Ensure the PBFREE suffix matches lead-free requirements. Check datasheet revisions for parameter consistency across different vendors before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component for high-current PNP switching needs requiring Darlington gain. Consider the TO-220AB package for adequate heat dissipation up to 65W. Verify voltage ratings against circuit peaks. Note that multiple manufacturers produce equivalent part numbers; ensure electrical specifications align with design requirements before substitution.

Single Bipolar Transistors Part Context

This transistor belongs to the family of power bipolar junction transistors designed for robust switching and amplification. The Darlington configuration provides high current gain, simplifying drive circuitry. The TO-220AB package facilitates mounting on heat sinks for thermal management in industrial and consumer electronics applications.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitutes include the 2N6667G and 2N6668G from ON Semiconductor in TO-220AB packages. Verify pinout compatibility and thermal resistance characteristics when replacing with these equivalents.

2N6668 PBFREE2N6668 PBFREE
$1.12
Buy Now