2N6668 TIN/LEAD

Description：TRANS PNP DARL 80V 10A TO-220-3
Series：-

SKU:d43b315de3d0 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N6668 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TRANS PNP DARL 80V 10A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6668 TIN/LEAD

Description：TRANS PNP DARL 80V 10A TO-220-3
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
Transistor Type：PNP - Darlington
Current - Collector (Ic) (Max)：10:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：65 W
Frequency - Transition：20MHz
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N6668 TIN/LEAD

2N6668 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6668 TIN/LEAD is an NPN silicon power transistor housed in a TO-220 package. It supports a collector current of 10 A and dissipates up to 65 W. The device features a collector-base breakdown voltage of 80 V, a collector-emitter breakdown voltage of 80 V, and an emitter-base breakdown voltage of 1,000 V. DC current gain ranges from 20 to 20,000 at specified test conditions. Saturation voltage is 2.0 V at 5 A, with a transition frequency of 20 MHz.

Single Bipolar Transistors Feature Summary

High-voltage emitter-base junction rated at 1,000 V for robust operation
Capable of handling continuous collector currents up to 10 A
Provides high DC current gain ranging from 20 to 20,000
Features a fully isolated tab within the TO-220 case

Single Bipolar Transistors Applications

High-voltage switching circuits
Linear regulator designs
Power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required plating specification. The TIN/LEAD designation indicates lead-based terminal finish. Confirm compliance with project material restrictions regarding lead content before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when applications require high emitter-base voltage tolerance alongside moderate collector current capabilities. Ensure thermal management solutions accommodate the 65 W power dissipation rating under expected operating loads.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor power transistor portfolio utilizing standard TO-220 packaging. It serves as a discrete semiconductor solution for medium-to-high power electronic systems requiring reliable NPN switching or amplification characteristics.