2N6690

Single Bipolar Transistors Overview

The Microchip Technology 2N6690 is a silicon NPN power bipolar junction transistor (BJT) designed for through-hole mounting. It features a maximum collector-emitter voltage of 400V and a continuous collector current rating of 15A. The device has a power dissipation capacity of 3W, making it suitable for high-voltage switching applications requiring robust performance in standard axial or flanged packages.

Single Bipolar Transistors Feature Summary

• High voltage capability with a 400V collector-emitter breakdown rating
• High current handling with a 15A continuous collector current specification
• Constructed using silicon technology for reliable operation

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power supply output stages
• Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the specific package variant and lead times directly with Microchip Technology or authorized distributors, as availability may vary. Confirm that the component meets all necessary environmental compliance standards required for your specific application before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with significant current handling capabilities. Ensure the thermal management solution supports the 3W power dissipation limit under expected operating conditions to maintain reliability within the specified temperature range.

Single Bipolar Transistors Part Context

This part belongs to the family of discrete power transistors manufactured by Microchip Technology. It serves as a fundamental active component in electronic designs where robust NPN switching is required. The 2N6690 provides a standardized solution for engineers needing high-voltage performance in a through-hole format.