2N6724-18 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6724-18 TIN/LEAD is a silicon NPN Darlington power transistor housed in the TO-237 (TO-92) package. It features a maximum collector current of 1.5 A and a continuous power dissipation of 2.0 W. The device provides a collector-emitter breakdown voltage of 40 V and a collector-base breakdown voltage of 50 V. Electrical characteristics include a minimum DC current gain of 4,000 at 10 mA and a maximum collector-emitter saturation voltage of 1.0 V at 1 A.

Single Bipolar Transistors Feature Summary

• Darlington configuration for high current amplification
• Silicon NPN construction
• Through-hole mounting capability

Single Bipolar Transistors Applications

• High-gain amplifier circuits
• Switching applications requiring moderate current drive
• Driver stages for relays or motors

Single Bipolar Transistors Procurement Notes

This component is classified as End of Life by the manufacturer. Verify availability through authorized distributors or surplus suppliers. Confirm that the specific ordering suffix matches the required plating finish, as standard production may have transitioned to lead-free options. Request updated datasheets to ensure compliance with current environmental regulations before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this part when a high-current gain NPN transistor is required in a TO-237 package. Ensure the circuit design accommodates the specified 40 V collector-emitter voltage rating and 1.5 A current limit. Consider thermal management requirements due to the 2.0 W power dissipation rating. Verify that the Darlington configuration's higher saturation voltage meets the application's efficiency needs compared to single-transistor alternatives.

Single Bipolar Transistors Part Context

The 2N6724-18 belongs to the Central Semiconductor 2N67xx series of power transistors manufactured in the TO-237 case style. This series includes various NPN and PNP variants with different voltage ratings. The 2N6724 specifically denotes the NPN variant with a 40 V collector-emitter breakdown voltage. The product line is designed for general-purpose power switching and amplification tasks.

Single Bipolar Transistors Replacement Considerations

Official replacement data lists 'N/A' for the 2N6724-18. No direct substitute is provided by the manufacturer. Designers must evaluate alternative components based on electrical parameters and package compatibility.