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The 2N6758 is a military-qualified N-channel silicon power MOSFET designed for high-reliability applications. It operates in enhancement mode within a TO-3 flange mount package. The device supports a maximum drain current of 9A and withstands a minimum drain-source breakdown voltage of 200V. Its maximum on-resistance is specified at 0.4 ohms. Qualified per MIL-PRF-19500/542, it is available in JAN, JANTX, and JANTXV levels.
Verify that the specific ordering suffix matches the required reliability grade (JAN, JANTX, or JANTXV). Confirm lead times as these are specialized military-grade components. Ensure compliance with relevant export control classifications such as EAR99 before finalizing procurement orders.
Select this component when a robust N-channel MOSFET with a 200V rating is required for critical systems. Consider the TO-3 package for effective heat dissipation via flange mounting. Evaluate thermal management requirements against the 9A continuous current capability.
This part belongs to a family of switching transistors including the 2N6756, 2N6760, and 2N6762. These devices share similar structural characteristics but differ in voltage and current ratings. Microsemi offers other products for varying power and speed requirements.
Cross-reference with 2N6756, 2N6760, and 2N6762 if system parameters allow for different voltage or current thresholds. Verify pinout compatibility and thermal resistance specifications before substituting.