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Product Detailed Parameters
- Description：MOSFET N-CH 500V 12A TO3
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：500mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：4W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3
- Package / Case：TO-204AE
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Overview
The Microsemi Corporation 2N6770 is a high-voltage N-channel power MOSFET designed for robust switching applications. It features a continuous drain current of 12A and a drain-source breakdown voltage of 500V. The device exhibits a maximum on-resistance of 400 milliohms at a gate drive of 10V, ensuring efficient conduction. Packaged in the TO-204AA form factor, it supports a maximum power dissipation of 150W and operates within a junction temperature range up to 150°C.
Feature Summary
- High-voltage capability with 500V drain-source breakdown rating
- Low on-resistance for efficient power handling
- Robust thermal performance suitable for high-power environments
Applications
- Industrial motor control systems
- High-voltage power supply circuits
- Automotive power management modules
Procurement Notes
Verify the specific manufacturer designation, as historical records indicate production by both Infineon and Microsemi/Microchip. Confirm the package style matches the required mechanical constraints. Ensure the component meets the necessary reliability standards for the intended deployment environment before finalizing procurement.
Selection Notes
Select this component when a rugged N-channel MOSFET with high voltage tolerance is required. The 12A current rating and low on-resistance make it suitable for medium-power switching tasks. Consider the TO-204AA package for through-hole mounting requirements and verify thermal management capabilities for the specific application load.
Part Context
This part belongs to the family of discrete power semiconductors used in industrial and automotive sectors. It serves as a critical switching element in power conversion topologies. The TO-204AA package provides a standardized footprint for legacy and modern high-reliability designs requiring durable silicon carbide or advanced silicon MOSFET solutions.
