ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-205AF (TO-39)
- Package / Case：TO-205AF Metal Can
Download product information
Overview
The Harris Corporation 2N6792 is a single N-channel power MOSFET designed for rugged environments. It features a hermetically sealed TO-39 (TO-205AF) metal package with three pins. Key electrical parameters include a drain-source breakdown voltage of 400 V, a continuous drain current of 2 A at case temperature, and a maximum on-resistance of 1.8 to 1.9 Ω. The device supports a pulse drain current of 10 A and has an avalanche energy rating of 0.242 mJ. It operates in enhancement mode and utilizes silicon metal-oxide semiconductor technology.
Feature Summary
- Hermetically sealed metal package for environmental protection
- High-reliability construction suitable for critical applications
- N-channel enhancement mode operation
Applications
- Ground-based telecommunications systems
- Vehicle electronics
- Shipboard equipment
- Weapon systems
Procurement Notes
Verify the specific manufacturer suffix when ordering, as variants such as JANTX2N6792 or SCF2N6792T2 exist from different suppliers like Semicoa or Infineon. Confirm that the required package is the hermetic TO-39/TO-205AF style. Ensure the selected variant meets the necessary military or high-reliability standards if the application demands it. Cross-reference datasheets to confirm exact resistance values and thermal ratings.
Selection Notes
Select this component for applications requiring high voltage isolation and robust physical packaging. The 400V rating and 2A current capacity define its operational limits. Consider the TO-39 package for through-hole mounting and superior thermal dissipation compared to plastic packages. Verify compatibility with existing circuit designs regarding gate drive requirements and on-resistance losses.
Part Context
The 2N6792 belongs to a family of high-reliability power MOSFETs often associated with military specifications such as MIL-PRF-19500/555. While originally associated with Harris Corporation, similar devices are produced by other manufacturers like Semicoa under part numbers such as SCF2N6792T2. These components are engineered for long-term reliability in harsh conditions where failure is not an option.
Replacement Considerations
Equivalent parts include JANTX2N6792 and JANTXV2N6792. Semicoa offers the SCF2N6792T2 as a compatible alternative. Verify pinout and electrical tolerances before substitution.
