ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 100V 8A 18ULCC
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：180mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250mA
- Gate Charge (Qg) (Max) @ Vgs：6.34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：18-ULCC (9.14x7.49)
- Package / Case：18-CLCC
Download product information
Overview
The Microsemi 2N6796U is a military-qualified N-channel MOSFET designed for high-reliability applications. It operates within a junction temperature range of -55°C to +150°C and features a ceramic LCC-18 package with gold-plated terminals. The device supports a drain-source voltage of 100V, a continuous DC drain current of 8.0A at +25°C case temperature, and a total power dissipation of 0.8W at ambient conditions. It exhibits a static on-state resistance of 0.18Ω at 10V gate drive.
Feature Summary
- Surface mount equivalent of JEDEC registered 2N6796 series
- Qualified per MIL-PRF-19500/557 up to JANTXV level
- RoHS compliant by design
Applications
- Military applications
- High-reliability applications
- Crowded area mounting
Procurement Notes
Verify the specific reliability level (JAN, JANTX, or JANTXV) required for your application, as qualification levels vary. Confirm that the U-18 LCC surface mount package matches your PCB footprint. Ensure thermal management aligns with the specified derating curves for case temperatures above +25°C.
Selection Notes
Select this component when a ruggedized N-channel MOSFET with a 100V rating is needed in a compact surface mount form factor. Consider the 0.18Ω on-resistance for conduction loss calculations. Verify compatibility with the U-18 LCC package dimensions and terminal plating specifications for your assembly process.
Part Context
This part belongs to a family of switching transistors including the 2N6798U, 2N6800U, and 2N6802U. These devices share similar packaging and qualification standards but differ in voltage ratings and current capabilities. The 2N6796U specifically offers the lowest voltage threshold within this group.
Replacement Considerations
Direct replacements include other members of the same qualified family: 2N6798U, 2N6800U, and 2N6802U. Ensure the substitute part meets the required voltage and current specifications for the circuit design.
