2N696S

Single Bipolar Transistors Overview

The Microchip Technology 2N696S is an NPN silicon power bipolar junction transistor (BJT) designed for through-hole mounting in a TO-5-3 metal can package. It features a collector-emitter voltage rating of 40 V, a collector-base voltage of 60 V, and an emitter-base voltage of 5 V. The device supports a maximum power dissipation of 600 mW and operates within a temperature range of -65°C to +200°C. DC current gain (hFE) ranges from 20 to 60 at 150 mA and 10 VDC, with a collector-emitter saturation voltage of 1.5 V.

Single Bipolar Transistors Feature Summary

• High thermal stability enabling operation up to +200°C
• Robust metal TO-5-3 hermetic packaging
• Single NPN configuration optimized for switching applications

Single Bipolar Transistors Applications

• Military-grade switching circuits
• High-reliability analog amplification
• Aerospace control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'S' against the official Microchip datasheet to confirm exact binning or qualification level differences compared to the standard 2N696. Ensure procurement channels provide traceable documentation for military or aerospace compliance requirements.

Single Bipolar Transistors Selection Notes

Select this component when high-temperature performance and radiation hardness are required. The TO-5-3 package facilitates reliable heat dissipation in constrained environments. Verify that the 600 mW power limit aligns with the thermal design of the target circuit.

Single Bipolar Transistors Part Context

The 2N696 series belongs to Microchip's portfolio of qualified discrete semiconductors. These devices are typically manufactured under MIL-PRF-19500 standards, ensuring strict quality control for defense and space applications where standard commercial components are insufficient.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other 2N696 variants or equivalent MIL-spec NPN transistors. Confirm pinout compatibility and electrical parameter tolerances before substitution.