Single Bipolar Transistors 2N697A TIN/LEAD product image

2N697A TIN/LEAD

$1.01
  • Description:35V 500MA 600MW TH TRANSISTOR-SM
  • Series:-

SKU:328ee80fd5da Category: Brand:

  
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2N697A TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 35V 500MA 600MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N697A TIN/LEAD

  • Description:35V 500MA 600MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):35 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 10V
  • Power - Max:-
  • Frequency - Transition:50MHz
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N697A TIN/LEAD

2N697A TIN/LEAD

Single Bipolar Transistors Overview

The 2N697A TIN/LEAD is a single NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum DC collector current of 500 mA and a collector-emitter voltage (VCEO) of 35 V. The device has a collector-base voltage (VCBO) of 60 V and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 600 mW with a transition frequency (fT) of 50 MHz. It operates within a temperature range of -65°C to +150°C and utilizes a through-hole package.

Single Bipolar Transistors Feature Summary

  • Single NPN configuration for discrete switching and amplification
  • Through-hole mounting style for standard PCB integration
  • Wide operating temperature range up to +150°C

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Low-power amplification stages
  • Signal processing applications

Single Bipolar Transistors Procurement Notes

Verify the specific plating suffix required, as the model designation includes TIN/LEAD which may differ from PBFREE variants in compliance status. Confirm RoHS details directly with the manufacturer or authorized distributor documentation. Ensure the ordering part number matches the exact lead finish specification needed for the assembly process. Check for any regional shipping restrictions or export control classifications associated with this component.

Single Bipolar Transistors Selection Notes

Select this component when a medium power NPN BJT with 35 V collector-emitter voltage and 500 mA continuous current capability is required. The 600 mW power dissipation rating suits low-to-medium power applications. Consider the 50 MHz transition frequency for signal integrity in moderate-speed circuits. Verify that the through-hole package format aligns with the target board design constraints.

Single Bipolar Transistors Part Context

This component belongs to the Bipolar Junction Transistor (BJT) category produced by Central Semiconductor Corp. It is classified as a single NPN transistor designed for general electronic applications. The product line includes various configurations and voltage ratings, with this specific model offering a balance of current handling and voltage breakdown suitable for common circuit designs.

Single Bipolar Transistors Replacement Considerations

Consult official datasheets for pin-compatible alternatives with matching electrical parameters such as VCEO, IC, and package type. Verify functional equivalence before substitution.

2N697A TIN/LEAD2N697A TIN/LEAD
$1.01
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