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The JAN2N6989U/TR is a hermetically sealed, ceramic surface-mount quad PNP transistor array manufactured by Microchip Technology. It contains four independent silicon NPN transistors in a single package, designed for high-reliability applications. The device features a maximum collector-emitter voltage of 50V and a continuous collector current of 800mA per transistor. Total power dissipation is rated at 1W. It operates within a junction temperature range of -65°C to 200°C and meets MIL-PRF-19500/559 qualification standards.
Verify the specific suffix (e.g., U, TX, TXV) against the required military screening level. Confirm the package type matches the design footprint. Ensure the manufacturer source is authorized. Check for RoHS compliance status if applicable to the final assembly requirements. Validate the datasheet revision date for parameter accuracy.
Select this component when a compact, high-reliability quad PNP array is required. Consider the 50V rating and 800mA current capability for load matching. Evaluate the thermal management needs for the 1W total dissipation in the SMD package. Compare against alternative quad arrays for pin compatibility and gain specifications.
This part belongs to the 2N6989 family of quad PNP transistors. Variants include JAN2N6989U, JAN2N6989UTX, and JAN2N6989UTXV, differing primarily in screening levels. The base number 2N6989 identifies the core electrical characteristics shared across the series.
Direct substitutes include JAN2N6989UTX and JAN2N6989UTXV from Microchip. Cross-brand replacements require verification of pinout, voltage ratings, and hermetic sealing capabilities. Ensure any substitute meets the same MIL-PRF-19500/559 standard if military qualification is mandatory.