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The 2N6990 is a quad NPN silicon switching transistor array manufactured by Microchip Technology. It features four independent NPN transistors within a single package, designed for general-purpose switching applications. The device supports a maximum collector-emitter breakdown voltage of 50V and a continuous collector current rating of up to 800mA. Thermal characteristics include an operating junction temperature range from -65°C to +200°C. Power dissipation is rated at 400mW under specified conditions. The component is available in surface mount packages such as FPAK, suitable for space-constrained designs requiring multiple switching elements.
Verify the specific ordering suffix (e.g., JANS, JANTX) to confirm radiation tolerance or military grade requirements. Ensure the package type matches the PCB footprint. Confirm that the manufacturer source aligns with the required quality standard. Check datasheet revisions for updated thermal parameters before finalizing design integration.
Select this component when multiple independent NPN switches are required in a compact form factor. Consider the 50V breakdown voltage and 800mA current limits against circuit demands. Evaluate thermal resistance values if power dissipation approaches the 400mW limit. Compare package options like FPAK against through-hole alternatives based on assembly constraints.
The 2N6990 belongs to a family of unitized transistor arrays derived from the 2N2222A specification. It is often grouped with related parts like the 2N6989. These components provide a cost-effective solution for replacing discrete transistors in multi-switch designs. The quad architecture simplifies board layout compared to using individual devices.
JAN2N6990 and JANTX2N6990 are confirmed substitute part numbers offering different qualification levels.