2N7000

$0.18

Description：MOSFET TO-92 60V 0.2A
Series：-
Mfr：Diotec Semiconductor
Package：Cut Tape (CT),Tape & Box (TB)

SKU:5a77e2dc9288 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET TO-92 60V 0.2A
Series：-
Mfr：Diotec Semiconductor
Package：Cut Tape (CT),Tape & Box (TB)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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2N7000

Overview

The Diotec Semiconductor 2N7000 is an N-Channel Enhancement Mode Field Effect Transistor designed for general-purpose switching applications. It features a Drain-Source voltage (VDSS) of 60 V and a continuous Drain current (ID) of 200 mA. The device exhibits a maximum Drain-Source on-state resistance (RDS(on)) of 5 Ω at VGS = 10 V and ID = 500 mA, or 6 Ω at VGS = 4.5 V and ID = 75 mA. Gate-Source threshold voltage ranges from 0.8 V to 3 V. Total power dissipation is rated at 350 mW with a maximum operating junction temperature of 150°C. Input capacitance is typically 60 pF.

Feature Summary

Fast switching times suitable for signal processing
Compliant with RoHS, REACH, and Conflict Minerals regulations
Logic level drive capability for direct microcontroller interfacing

Applications

Signal processing circuits
Logic level converters
Driver stages

Procurement Notes

Verify the specific ordering suffix when purchasing. Standard commercial grade parts are available in Ammo Pack packaging. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes parts currently undergoing AEC-Q101 qualification. Confirm package availability requirements such as bulk options if needed.

Selection Notes

Select this component for low-power N-channel switching tasks requiring logic-level gate drive. Ensure the application current remains within the 200 mA continuous limit. Consider thermal derating for high ambient temperatures. Verify that the 60 V breakdown voltage meets circuit requirements.

Part Context

This part belongs to the standard N-Channel Enhancement Mode FET family offered by Diotec Semiconductor. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. The device is classified as commercial/industrial grade unless specified otherwise with automotive suffixes.