2N7000

$0.43

Description：MOSFET TO92 N 60V 0.2A 5OHM 150C
Series：-
Mfr：onsemi
Package：Bulk

SKU:5a77e2dc9288 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET TO92 N 60V 0.2A 5OHM 150C
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA)

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2N7000

Overview

The onsemi 2N7000 is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a TO-92 package with three pins and operates within a drain-source voltage range of 60 V. The device supports a continuous drain current of 200 mA and a maximum power dissipation of 400 mW. Key electrical characteristics include a gate threshold voltage between 0.8 V and 3 V, and a static drain-source on-resistance of up to 5 Ω at VGS = 10 V. It provides ESD protection exceeding 100 V for HBM and 2 kV for CDM.

Feature Summary

High density cell design minimizes on-state resistance while ensuring rugged switching performance.
Voltage controlled small signal switch suitable for low-voltage applications.
Integrated ESD protection levels exceeding 100 V (HBM) and 2 kV (CDM).
Pb-Free and Halogen Free construction.

Applications

Small servo motor control
Power MOSFET gate drivers
General switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and quantity. Standard bulk packaging requires a minimum order quantity of 10,000 units. Alternative packaging options such as Ammo or Tape and Reel are available with different minimum order quantities. Confirm compliance with RoHS standards and ensure the component meets environmental requirements for the intended application.

Selection Notes

Select this component for low-current, low-voltage switching tasks requiring direct logic level drive capability. The TO-92 through-hole package facilitates prototyping and manual assembly. Ensure the operating junction temperature remains within the -55°C to 150°C range. Consider thermal derating factors when designing for continuous operation above 25°C ambient temperature.

Part Context

This part belongs to the 2N7000 series of N-channel enhancement mode FETs produced by onsemi. It utilizes proprietary DMOS technology optimized for low on-resistance. The device is designed for reliability in small signal applications. It serves as a standard solution for general-purpose switching where compact size and low cost are prioritized alongside adequate current handling capabilities.

Replacement Considerations

The datasheet lists 2N7002 and NDS7002A as related devices within the same family. Verify pinout compatibility and electrical parameter limits before substitution. The 2N7002 uses a SOT-23 package, requiring layout adjustments. Check specific current ratings and on-resistance values for equivalent performance.