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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92-3
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Overview
The onsemi 2N7000-D26Z is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a TO-92 package with three leads and supports continuous drain currents up to 200 mA at 25°C. The device provides a maximum drain-source voltage of 60 V and a gate-source voltage rating of ±20 V. Static drain-source on-resistance is specified as a maximum of 5 Ω at VGS = 10 V and ID = 500 mA, or 5.3 Ω at VGS = 4.5 V and ID = 75 mA. Maximum power dissipation is 400 mW, with an operating temperature range from -55°C to 150°C.
Feature Summary
- High-density cell design for low on-state resistance
- Voltage-controlled small signal switching capability
- Integrated ESD protection exceeding 100 V HBM and 2 kV CDM
- Lead-free and halogen-free construction
Applications
- Small servo motor control
- Power MOSFET gate drivers
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix D26Z corresponds to the tape and reel packing method containing 2000 units per immediate pack. Confirm that the component meets lead-free and halogen-free requirements as stated in the datasheet. Ensure the TO-92 package dimensions align with CASE 135AN or CASE 135AR mechanical outlines during integration.
Selection Notes
Select this component for low-voltage, low-current applications requiring rugged performance. Consider the thermal resistance of 312.5 °C/W when designing for ambient conditions. Evaluate the gate threshold voltage range of 0.8 V to 3 V to ensure compatibility with logic-level drive signals. Verify safe operating area limits for pulsed current requirements.
Part Context
This part belongs to the 2N7000 series alongside the 2N7002 and NDS7002A variants. While sharing similar electrical characteristics, the 2N7000 utilizes a TO-92 through-hole package compared to the SOT-23 surface-mount options. The series is designed to minimize on-state resistance while providing fast switching performance suitable for small signal applications.
Replacement Considerations
Direct substitutes within the same family include the standard 2N7000 (bulk), 2N7000-D74Z (ammo), and 2N7000-D75Z (tape and reel). These share identical electrical specifications but differ in packaging format and minimum order quantity.
