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Product Detailed Parameters
- Description：MOSFET N-CH 60V 350MA TO92-3
- Series：STripFET™
- Mfr：STMicroelectronics
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2 nC @ 5 V
- Vgs (Max)：±18V
- Input Capacitance (Ciss) (Max) @ Vds：43 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92-3
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
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Overview
The STMicroelectronics 2N7000 is an N-channel 60 V, 0.35 A Power MOSFET manufactured using the second-generation STripFET™ process. It features a maximum drain-source on-resistance of less than 5 Ω at 10 V gate drive and is available in a TO-92 through-hole package with bulk packaging. The device exhibits rugged avalanche characteristics, low gate charge, and low threshold drive requirements.
Feature Summary
- Utilizes unique single feature size strip-based process for high packing density
- Features rugged avalanche characteristics and remarkable manufacturing reproducibility
- Designed for low power drive applications with low gate charge
Applications
- Switching applications
Procurement Notes
Verify that the specific order code matches the required TO-92 package configuration. Confirm the marking code corresponds to the 2N7000G designation as documented in the official datasheet. Ensure compliance with ECOPACK® lead-free specifications if environmental standards are required for the assembly process.
Selection Notes
Select this component when a through-hole N-channel MOSFET with a 60 V breakdown voltage is required. The device is suitable for circuits demanding low threshold drive capabilities and fast switching speeds. Consider the thermal resistance limits and continuous current ratings relative to the operating junction temperature range.
Part Context
This component belongs to the STripFET™ Power MOSFET family from STMicroelectronics. It shares the same underlying technology and electrical profile as the 2N7002, which is packaged in SOT23-3L. Both devices utilize the same second-generation strip-based process architecture.
Replacement Considerations
The 2N7002 serves as a functional equivalent within the same product line, offering identical electrical performance but utilizing a SOT23-3L surface-mount package instead of the TO-92 form factor.
