ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Box (TB)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92 (TO-226)
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
Download product information
Overview
The onsemi 2N7000RLRMG is a small signal N-channel MOSFET housed in a TO-92 package. It features a drain-source voltage rating of 60 Vdc and a continuous drain current capacity of 200 mAdc. The device exhibits a maximum static drain-source on-resistance of 5.0 ohms at VGS = 10 Vdc and ID = 0.5 Adc, or 6.0 ohms at VGS = 4.5 Vdc and ID = 75 mAdc. Gate threshold voltage ranges from 0.8 to 3.0 Vdc. Total power dissipation is rated at 350 mW at 25°C case temperature with a thermal resistance junction-to-ambient of 357 °C/W.
Feature Summary
- AEC Qualified for automotive reliability standards
- PPAP Capable for production part approval
- Pb-Free Package available
Applications
- Battery switch circuits
- Load switching applications
- General purpose small signal amplification
Procurement Notes
Verify the specific ordering suffix RLRMG corresponds to the Tape & Ammo Box shipping configuration containing 2000 units per reel. Confirm Pb-Free status and AEC qualification requirements align with project specifications before finalizing procurement orders.
Selection Notes
Select this component when an N-channel enhancement mode MOSFET with a 60V breakdown voltage and TO-92 through-hole mounting is required. Ensure the 200 mA continuous current limit and 5 ohm on-resistance meet the circuit's load and drive voltage constraints.
Part Context
This device belongs to the 2N7000 series of small signal MOSFETs manufactured by onsemi. It utilizes planar DMOS technology and is designed for general-purpose switching and amplification tasks within low-power electronic systems requiring robust performance in a standard three-pin transistor outline.
Replacement Considerations
Cross-reference with other manufacturers' 2N7000 equivalents such as Diotec Semiconductor or SEMIWELL variants. Verify pinout compatibility (Source-Gate-Drain) and electrical parameter tolerances match the original design requirements.
