2N7002

Overview

The UMW 2N7002 is an N-channel enhancement mode MOSFET housed in a SOT-23 package. It features a high-density cell design for low on-resistance and rugged switching performance. Key electrical parameters include a drain-source breakdown voltage of 60 V, a continuous drain current of 115 mA, and a maximum power dissipation of 225 mW at 25°C. The device operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• High density cell design for low RDS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• High saturation current capability

Applications

• Small signal switching applications
• Low voltage logic level circuits
• Power MOSFET gate drivers

Procurement Notes

Verify the specific manufacturer prefix against official datasheets, as component specifications vary by vendor. Confirm the package type matches the required footprint, typically SOT-23 for this part number. Ensure the operating temperature range and voltage ratings align with the target circuit design requirements before procurement.

Selection Notes

Select based on the required drain-source voltage rating and continuous current capacity. Consider the thermal resistance and power dissipation limits for the intended application environment. Verify compatibility with the driving logic levels to ensure efficient switching performance and minimal conduction losses.

Part Context

This component belongs to the standard 2N7002 family of N-channel MOSFETs widely used in consumer electronics and industrial control systems. It serves as a fundamental building block for low-power switching tasks where compact surface-mount packaging is preferred over through-hole alternatives.

Replacement Considerations

Cross-reference with other manufacturers' 2N7002 variants to ensure pinout and electrical parameter compatibility. Verify that substitute components meet or exceed the original voltage and current ratings.