2N7002

Overview

The EVVO 2N7002 is an N-channel enhancement mode MOSFET housed in a SOT-23 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 115 mA at 25°C. The device exhibits a maximum on-resistance of 7.5 Ω at VGS=10V with ID=500mA, and a gate threshold voltage ranging from 1 to 2.5 V at ID=250µA. Maximum power dissipation is rated at 225 mW, with a junction temperature range spanning -55°C to 150°C.

Feature Summary

• High density cell design for low RDS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• High saturation current capability

Applications

• Small signal switching applications
• Low voltage logic level circuits
• Battery powered devices

Procurement Notes

Verify the specific manufacturer designation, as the 2N7002 identifier is utilized by multiple semiconductor producers including EVVO, Nexperia, Vishay, and Diodes Incorporated. Confirm that the component matches the required SOT-23 footprint and electrical specifications provided in the official datasheet before finalizing procurement orders.

Selection Notes

Select this component for low-power switching tasks requiring a compact surface-mount form factor. Ensure the application operates within the 60 V drain-source limit and 115 mA continuous current rating. Consider the thermal constraints imposed by the 225 mW power dissipation capability when designing the PCB layout.

Part Context

This part belongs to the standard 2N7002 family of N-channel MOSFETs widely used in consumer electronics and industrial control systems. While the base specification remains consistent across manufacturers, variations exist in packaging suffixes and exact electrical tolerances. The EVVO version specifically utilizes the SOT-23 outline for space-constrained designs.

Replacement Considerations

Cross-reference with other 2N7002 variants such as those from Nexperia or Vishay, ensuring pinout compatibility and matching voltage/current ratings.