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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：830mW (Tc)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Nexperia 2N7002/HAMR is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates with a drain-source voltage of 60 V and a continuous drain current of 300 mA at 25 °C. The device features a total power dissipation of 0.83 W and a maximum drain-source on-state resistance of 5 Ω at VGS = 10 V. It is housed in a SOT23 (TO-236AB) surface-mounted package with three leads.
Feature Summary
- Suitable for logic level gate drive sources
- Very fast switching capability
- Surface-mounted package design
Applications
- Logic level translators
- High-speed line drivers
Procurement Notes
Verify the specific HAMR suffix against official Nexperia documentation to confirm its exact meaning, as standard datasheets may not detail this ordering variant. Ensure the component matches the required SOT23 package dimensions and thermal characteristics for your application. Confirm compliance with relevant environmental standards such as RoHS before finalizing procurement.
Selection Notes
Select this component for applications requiring low-voltage, small-signal switching with logic-level compatibility. Consider the 60 V breakdown voltage and 300 mA current limits when designing circuits. Evaluate the thermal resistance and power dissipation capabilities relative to the expected operating temperature and load conditions to ensure reliable performance.
Part Context
This part belongs to the 2N7002 series of N-channel Trench MOSFETs from Nexperia. The series is designed for general-purpose switching applications where small size and fast response are beneficial. The SOT23 package provides a compact solution for surface-mount assembly, making it suitable for space-constrained electronic designs.
Replacement Considerations
Direct replacements include other 2N7002 variants from different manufacturers that meet the same electrical specifications and package outline. Verify pinout compatibility and thermal performance when substituting. Ensure any alternative component maintains the required logic-level gate drive characteristics and switching speeds.
