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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA TO236AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：830mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Nexperia 2N7002,215 is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a TO-236AB (SOT-23) plastic surface-mounted package with three leads. The device supports a drain-source voltage of 60 V and a continuous drain current of 300 mA at 25 °C solder point temperature. Total power dissipation reaches 0.83 W under the same conditions. The gate-source voltage withstands up to 30 V, while peak pulsed ratings extend to 40 V. Junction temperature ranges from -65 °C to +150 °C.
Feature Summary
- Logic-level compatible for direct drive from standard logic sources
- Very fast switching performance enabled by Trench MOSFET technology
- Designed for surface-mounted installation in compact electronic assemblies
Applications
- Logic level translators
- High-speed line drivers
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration and manufacturing origin. Ensure the component meets required RoHS compliance standards for the target market. Confirm that the SOT-23 footprint matches the design layout before finalizing procurement orders.
Selection Notes
Select this component when a small-form-factor N-channel switch is required for low-voltage applications. The Trench MOSFET architecture offers improved switching characteristics compared to planar technologies. Verify thermal management requirements based on the specified junction-to-ambient resistance values for the intended operating environment.
Part Context
This part belongs to the 2N7002 series of N-channel enhancement mode FETs manufactured by Nexperia USA Inc. The series utilizes proprietary Trench MOSFET technology to achieve high performance in a minimal footprint. The 2N7002,215 designation specifically identifies the version packaged in the TO-236AB form factor suitable for automated surface-mount assembly processes.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-referencing pinouts and electrical limits is mandatory when replacing components in existing designs.
