2N7002_NB9G002

$0.04

Description：MOSFET N-CH 60V 115MA SOT-23
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:c51f7957e0a1 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 115MA SOT-23
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002_NB9G002

Overview

The onsemi 2N7002_NB9G002 is an N-Channel Enhancement Mode Field Effect Transistor. It features a Drain-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 115 mA at 25°C. The device has a maximum power dissipation of 200 mW and operates within a temperature range of -55°C to 150°C. Static Drain-Source On-Resistance (RDS(ON)) is specified at 7.5 Ω max when VGS = 10 V and ID = 500 mA, or 7.5 Ω max at VGS = 5.0 V and ID = 50 mA. Gate Threshold Voltage (VGS(th)) ranges from 1 V to 2.5 V at ID = 250 µA.

Feature Summary

Utilizes high cell density DMOS technology for low on-state resistance.
Functions as a voltage-controlled small signal switch with rugged reliability.
Capable of delivering high saturation current for switching applications.

Applications

Small servo motor control
Power MOSFET gate drivers
Low voltage, low current switching applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape/reel specifications. Ensure compatibility with existing PCB footprints and thermal management requirements before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring a compact N-channel enhancement mode transistor with a 60V breakdown voltage. Consider the 115mA continuous current limit and 200mW power dissipation constraints when designing the circuit layout and heat sinking strategy.

Part Context

This part belongs to the 2N7000/2N7002/NDS7002A family of N-Channel Enhancement Mode Field Effect Transistors. These devices are produced using proprietary DMOS technology designed to minimize on-state resistance while providing fast switching performance suitable for various electronic circuits.

Replacement Considerations

Cross-reference with other manufacturers' 2N7002 equivalents such as Vishay or Diodes Inc. Verify pinout compatibility and ensure electrical parameters like RDS(ON) and BVDSS meet or exceed original design specifications.