2N7002AKQB-QZ

$0.33

Description：2N7002AKQB-Q/SOT8015/DFN1110D-
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c2ad927bc2fe Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：2N7002AKQB-Q/SOT8015/DFN1110D-
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2N7002AKQB-QZ

Overview

The Nexperia 2N7002AKQB-Q is a 60 V N-channel Trench MOSFET in a DFN1110D-3 (SOT8015) package. It features logic-level compatibility and an extended junction temperature range up to 175 °C. Key electrical parameters include a drain-source voltage of 60 V, gate-source voltage limits of ±20 V, and a continuous drain current of 340 mA at 25 °C. The typical on-state resistance is 2.1 Ω at VGS=10 V and ID=100 mA. It includes ESD protection rated at 500 V HBM and side wettable flanks for inspection.

Feature Summary

Logic-level compatible operation
Extended temperature range up to 175 °C junction temperature
Side wettable flanks for optical solder inspection
AEC-Q101 qualified for automotive applications

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix matches the required package variant and qualification level. Confirm that the DFN1110D-3 footprint aligns with your PCB design constraints. Ensure thermal management strategies account for the specified thermal resistance values under your intended operating conditions. Cross-reference the marking code QK with incoming inspection protocols to guarantee authenticity and traceability.

Selection Notes

Select this component when a compact N-channel MOSFET with high-temperature capability is required. The low on-state resistance supports efficient switching in low-current applications. The AEC-Q101 qualification makes it suitable for automotive environments. Consider the small package size for space-constrained designs requiring reliable surface-mount assembly with visible solder joints.

Part Context

This device belongs to Nexperia's portfolio of small-signal MOSFETs utilizing Trench technology. It is designed for general-purpose switching tasks where size and thermal performance are critical. The DFN1110D-3 package offers a leadless solution with enhanced thermal dissipation compared to traditional plastic packages, supporting modern automated assembly processes.

Replacement Considerations

Check pinout compatibility and package dimensions against existing designs. Verify that replacement devices meet or exceed the 60 V breakdown voltage and 340 mA current ratings. Ensure thermal resistance characteristics are suitable for the target application's power dissipation requirements.