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Product Detailed Parameters
- Description：MOSFET N-CH 60V 290MA SC75
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：290mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：260mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SC-75
- Package / Case：SC-75, SOT-416
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Overview
The 2N7002BKT,115 is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates with a drain-source voltage of 60 V and a continuous drain current of 290 mA at 25 °C. The device features a maximum gate-source voltage of ±20 V and a typical on-state resistance of 1.6 Ω at VGS=10V. Packaged in the SOT416 (SC-75) surface-mount format, it supports junction temperatures up to 150 °C and includes ESD protection rated at 2 kV.
Feature Summary
- Logic-level compatible for direct interface with standard logic outputs
- Very fast switching performance enabled by Trench MOSFET technology
- Robust electrostatic discharge protection up to 2 kV via human body model
- Qualified for automotive applications under AEC-Q101 standards
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the manufacturer designation carefully, as the original NXP Standard Product business transitioned to Nexperia in February 2017. Ensure the component source aligns with current Nexperia production standards rather than legacy NXP documentation. Confirm that the specific ordering suffix matches the required packaging configuration for your assembly process.
Selection Notes
Select this component when a compact N-channel switch is required for low-current applications up to 290 mA. The SC-75 package offers space efficiency for dense PCB layouts. Consider the thermal resistance characteristics if operating near ambient temperature limits or requiring high duty cycle operation without significant heatsinking.
Part Context
This device belongs to the 2N7002 series of small-signal N-channel MOSFETs. It represents a transition from legacy NXP Semiconductors branding to Nexperia B.V. manufacturing standards. The part utilizes advanced trench technology to achieve improved switching speeds and lower on-resistance compared to older planar designs within the same form factor.
Replacement Considerations
Direct substitutes include the 2N7002BKW,115 and 2N7002BKS,115, which share similar electrical profiles but utilize different package types such as SC-70 or TSSOP-6 respectively.
