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Product Detailed Parameters
- Description：MOSFET
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：35 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：830mW (Tj)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The MCC 2N7002C-TP is a single N-channel enhancement mode MOSFET utilizing Trench Power MV technology. It features a 60V drain-source breakdown voltage and a continuous drain current of 350mA at 25°C, with a maximum pulsed drain current of 1.4A. The device offers a low on-resistance of 1.0Ω at VGS=10V and 1.4Ω at VGS=4.5V. Packaged in an SOT-23-3 surface-mount case, it supports a junction temperature range from -55°C to +150°C and provides a total power dissipation of 830mW.
Feature Summary
- Trench Power MV MOSFET technology for fast switching speed
- Moisture Sensitivity Level 1 classification
- Halogen-free "Green" device compliant with UL 94 V-0 flammability rating
Applications
- Switching applications requiring high-density battery designs
- Power MOSFET gate driver circuits
- Small servo motor control systems
Procurement Notes
Verify the authenticity of the 2N7002C-TP by purchasing directly from Micro Commercial Components or their authorized distributors. Counterfeit parts are prevalent; unauthorized sources lack traceability and quality assurance. Confirm that the ordering suffix indicates RoHS compliance and tape-and-reel packaging containing 3,000 pieces per reel before finalizing procurement.
Selection Notes
Select this component when a small-signal N-channel MOSFET with robust switching performance is required. The 60V rating suits low-voltage applications, while the SOT-23 package minimizes board space. Ensure the design accounts for the 1.0Ω on-resistance at 10V gate drive to manage conduction losses effectively within the specified thermal limits.
Part Context
This part belongs to the 2N7002 series of N-channel enhancement mode field-effect transistors manufactured by Micro Commercial Components. It is designed using proprietary high cell density DMOS technology to reduce on-state resistance while maintaining reliable switching capabilities suitable for various general-purpose electronic circuits.
Replacement Considerations
Potential substitutes include the Nexperia 2N7002,215 and the Texas Instruments 2N7002LDCKR. Verify pinout compatibility and electrical parameters such as breakdown voltage and on-resistance against the original datasheet specifications before implementation.
