2N7002DWAQ-7

Overview

The 2N7002DWAQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 60V and operates within a junction temperature range of -55°C to +150°C. The device provides a static drain-source on-resistance (RDS(on)) of 8Ω at VGS = 5V and 6Ω at VGS = 10V, with a continuous drain current (ID) of 170mA at TA = +25°C. Packaged in an SOT363 case, it includes two independent channels sharing a common source connection.

Feature Summary

• Dual N-channel configuration for space-efficient circuit design
• AEC-Q101 qualified and PPAP capable for automotive applications
• Low on-resistance combined with fast switching performance
• Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

• DC-DC Converters
• Power Management Functions
• Battery Operated Systems and Solid-State Relays
• Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors, etc.

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the 'Q' designation aligns with the required AEC-Q101 qualification and IATF 16949 manufacturing standards for your target application environment. Cross-reference the datasheet revision date against your component acceptance criteria.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. Ensure the 60V breakdown voltage and 170mA continuous current ratings exceed the peak operational demands of the load. Verify that the SOT363 package dimensions fit the available PCB real estate and that the thermal resistance characteristics are adequate for the expected power dissipation levels.

Part Context

This part belongs to the 2N7002DWA family of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares core electrical specifications with the standard 2N7002DWA-7 but carries the 'Q' suffix indicating automotive-grade qualification. The device utilizes a molded plastic SOT363 case with matte tin finish terminals annealed over an alloy 42 leadframe.

Replacement Considerations

The datasheet explicitly states that the 2N7002DWA is not recommended for new designs and recommends using the DMN65D8LDW as a replacement. Verify if the DMN65D8LDW meets all mechanical and electrical requirements before substitution.

FAQ

What is the gate threshold voltage range for the 2N7002DWAQ-7?

The gate threshold voltage (VGS(TH)) ranges from a minimum of 0.8V to a maximum of 2.5V, tested at VDS = VGS and ID = 250µA.

Is the 2N7002DWAQ-7 suitable for high-reliability automotive environments?

Yes, the 2N7002DWAQ variant is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities specifically for automotive applications requiring specific change control.

What is the total power dissipation rating for this device?

The total power dissipation depends on the mounting conditions: it is rated at 300mW when mounted on an FR-4 PC board with minimum pad layout, and 400mW when mounted on a 2oz copper substrate with a 1-inch square copper pad layout.