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The ALD1102BPAL is a monolithic dual P-channel matched MOSFET pair manufactured using an enhanced ACMOS silicon gate CMOS process. It features a low threshold voltage of 0.7V and high input impedance of 10^12 ohms typical. The device offers negative current temperature coefficient and low Vos grades of 2mV, 5mV, or 10mV. Electrical characteristics include a drain-source breakdown voltage of -10V, power dissipation of 500mW, and operating temperature range from 0°C to +70°C. It is housed in an 8-pin Plastic DIP package.
Verify the specific offset voltage grade (2mV, 5mV, or 10mV) required for the application when ordering, as the base part number may encompass multiple grades. Confirm the PAL suffix corresponds to the 8-pin Plastic DIP package and lead-free RoHS compliance. Ensure static control procedures are used due to ESD sensitivity.
Select the ALD1102BPAL for systems requiring low input bias current and fast switching speed in -2V to -10V environments. Consider the specific Vos grade based on offset voltage requirements. Verify that the 8-pin PDIP package fits the board layout constraints. Check if the 0°C to +70°C operating temperature range meets environmental specifications.
The ALD1102 series includes variants such as ALD1102ASAL, ALD1102BSAL, ALD1102APAL, and ALD1102PAL. The 'B' suffix typically denotes a specific offset voltage grade within the family. The 'P' indicates the Plastic DIP package, while 'L' signifies lead-free construction. These devices are designed for broad analog applications including choppers and data converters.
Direct replacements must match the dual P-channel configuration, 8-pin DIP package, and similar electrical parameters like VDS and power dissipation. Verify compatibility with existing circuit designs regarding threshold voltage and offset voltage grades.