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The ALD1102ASAL is a monolithic dual P-channel matched MOSFET pair manufactured using an enhanced ACMOS silicon gate process. It features low threshold voltage (0.7V typical), high input impedance (10^12 Ω typical), and negative current temperature coefficient. The device offers offset voltage grades of 2mV, 5mV, or 10mV, with DC current gain up to 10^9. Absolute maximum ratings include Drain-Source voltage of -10V, Gate-Source voltage of -10V, and power dissipation of 500mW. Operating temperature range is 0°C to +70°C. Package is 8-Pin SOIC Plastic.
Verify the specific grade suffix (A, B, or none) corresponds to the required offset voltage specification before ordering. Confirm package type matches design requirements. Ensure static control procedures are followed due to ESD sensitivity. Check RoHS compliance status if required by project specifications.
Select based on required offset voltage tolerance: ALD1102A for 2mV, ALD1102B for 5mV, or standard ALD1102 for 10mV. Consider operating voltage range limits of -10V for VDS and VGS. Evaluate thermal performance needs given the negative temperature coefficient characteristic. Verify package availability in SOIC-8 or PDIP-8 formats.
The ALD1102 series includes variants ALD1102A, ALD1102B, and ALD1102, differentiated primarily by offset voltage matching precision. The ASAL suffix indicates the 8-pin SOIC plastic package with lead-free (RoHS) compliant terminations. This component belongs to Advanced Linear Devices' family of CMOS analog building blocks designed for low-power, high-impedance applications.
No direct public substitute part numbers are documented in the provided datasheet. Designers should evaluate functional equivalents based on matching P-channel MOSFET characteristics, specifically threshold voltage, input impedance, and offset voltage grades within similar package constraints.