ALD1101BPAL

$5.53

Description：MOSFET 2N-CH 10.6V 8PDIP
Series：-

SKU:ddc0b61028c1 Category: FET, MOSFET Arrays Brand: Advanced Linear Devices Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 10.6V 8PDIP
Series：-
Mfr：Advanced Linear Devices Inc.
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Matched Pair
FET Feature：-
Drain to Source Voltage (Vdss)：10.6V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：75Ohm @ 5V
Vgs(th) (Max) @ Id：1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：500mW
Operating Temperature：0°C ~ 70°C (TJ)
Mounting Type：Through Hole
Package / Case：8-DIP (0.300", 7.62mm)
Supplier Device Package：8-PDIP
Grade：-
Qualification：-

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ALD1101BPAL

Overview

The ALD1101BPAL is a monolithic dual N-channel matched MOSFET pair manufactured using an enhanced ACMOS silicon gate process. It features a low threshold voltage of 0.7V and high input impedance of 10^12Ω typical. The device offers a drain-source breakdown voltage (BV_DSS) of 10V, maximum power dissipation of 500mW, and operates within a temperature range of 0°C to +70°C. Packaged in an 8-pin Plastic DIP (PDIP-8), it provides matched offset voltages with grades of 2mV, 5mV, or 10mV.

Feature Summary

Monolithic dual N-channel matched transistor pair for analog applications
Low threshold voltage and negative current temperature coefficient
High input impedance with extremely low DC current gain leakage
Matched for minimum offset voltage and differential thermal response

Applications

Precision current mirrors
Analog switches
Differential amplifier input stages
Sample and Hold circuits

Procurement Notes

Verify the specific offset voltage grade required (A: 2mV, B: 5mV, or standard: 10mV) when ordering. Confirm the package type matches the design, as the BPAL suffix indicates an 8-pin PDIP. Ensure static control procedures are followed due to ESD sensitivity. Check RoHS compliance status if lead-free requirements are mandatory for the assembly process.

Selection Notes

Select the ALD1101A variant for the lowest offset voltage grade of 2mV, or ALD1101B for 5mV. Use the ALD1101BPAL for standard 10mV offset in a DIP package. Consider pairing with ALD1102 for CMOS analog switch construction. Evaluate the 10V breakdown voltage limit against system supply rails. Verify that the 500mW power dissipation rating accommodates the thermal environment.

Part Context

The ALD1101 series includes variants ALD1101A, ALD1101B, and ALD1101, differentiated primarily by offset voltage matching precision. The ALD1101BPAL specifically denotes the B-grade offset version housed in an 8-pin Plastic DIP package. This component belongs to a family of enhancement-mode transistors designed for low-voltage, low-power analog signal processing tasks requiring high input impedance.