ALD1101APAL

ALD1101APAL

$6.61
  • Description:MOSFET 2N-CH 10.6V 8PDIP
  • Series:-

SKU:7af896e18f7b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 10.6V 8PDIP
  • Series:-
  • Mfr:Advanced Linear Devices Inc.
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Matched Pair
  • FET Feature:-
  • Drain to Source Voltage (Vdss):10.6V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:75Ohm @ 5V
  • Vgs(th) (Max) @ Id:1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:10pF @ 5V
  • Power - Max:500mW
  • Operating Temperature:0°C ~ 70°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Supplier Device Package:8-PDIP
  • Grade:-
  • Qualification:-

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ALD1101APAL

Overview

The ALD1101APAL is a monolithic dual N-channel matched MOSFET pair manufactured using an enhanced ACMOS silicon gate process. It operates within a +2V to +10V system range and features high input impedance with a negative current temperature coefficient. The device offers low threshold voltage, low input capacitance, and fast switching speed suitable for precision analog applications. Electrical specifications include a drain-source breakdown voltage of 10V, gate-source voltage limit of 10V, and power dissipation of 500mW. The ALD1101A grade specifies a maximum offset voltage of 2mV at 100µA, while the ALD1101B grade allows up to 5mV.

Feature Summary

  • Monolithic dual N-channel matched transistor pair designed for minimum offset voltage and differential thermal response
  • Enhancement-mode (normally off) operation with extremely low gate leakage current ensuring high DC current gain
  • Low threshold voltage and low input capacitance optimized for fast switching in low-voltage systems
  • RoHS compliant construction available in lead-free PDIP-8 packaging

Applications

  • Precision current mirrors and current sources
  • Analog switches and transmission gates
  • Differential amplifier input stages
  • Sample and hold circuits and data converters

Procurement Notes

Verify the specific offset voltage grade required for the application, as the ALD1101A and ALD1101B variants offer different performance levels regarding mismatch and threshold voltage. Confirm that the PDIP-8 package aligns with the PCB footprint requirements. Ensure static control procedures are followed during handling due to the device's sensitivity to electrostatic discharge.

Selection Notes

Select the ALD1101A variant when strict matching is critical for low offset voltage applications, whereas the ALD1101B provides acceptable performance for general-purpose analog switching. Consider the ALD1101 if standard matching tolerances suffice. Evaluate the operating temperature range to ensure it remains within the specified 0°C to +70°C limits for reliable operation in the target environment.

Part Context

The ALD1101 series belongs to Advanced Linear Devices' portfolio of precision CMOS analog integrated circuits. It is often paired with complementary P-channel devices like the ALD1102 to construct complete analog switch matrices or transmission gates. This component serves as a fundamental building block for low-power, low-voltage instrumentation and industrial control systems requiring high input impedance.

Replacement Considerations

Direct replacements must match the dual N-channel configuration and PDIP-8 package. Verify that substitute components meet the 10V breakdown voltage and 500mW power dissipation ratings. Check for equivalent offset voltage grades if precision matching is required for the specific circuit topology.

ALD1101APALALD1101APAL
$6.61
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