2N7002KDW-HF

Overview

The 2N7002KDW-HF is a dual N-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 115 mA per channel. The device exhibits a maximum on-resistance (Rds(on)) of 7.5 Ohms at a gate-source voltage (Vgs) of 4.5 V. It operates within a temperature range of -55°C to +150°C with a power dissipation (Pd) of 200 mW. Packaged in an SOT-363-6 surface-mount format, it supports a maximum gate-source voltage (Vgs) of ±20 V.

Feature Summary

• Dual configuration integrating two independent N-channel transistors in a single compact package for space-efficient circuit design.
• Enhancement mode operation optimized for low-voltage switching applications requiring fast response times.
• Robust thermal performance supporting high junction temperatures up to 150°C for reliable operation in demanding environments.

Applications

• Signal processing circuits requiring isolated or paired switching elements.
• Load switching applications managing low-power DC loads.
• Level shifting interfaces between different logic voltage domains.

Procurement Notes

Verify the specific suffix 'HF' against official Comchip Technology documentation to confirm halogen-free compliance status. Ensure the ordering part number matches the exact electrical specifications required for the target application. Cross-reference datasheet revisions to confirm pinout consistency with existing designs before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel topology is required within a limited footprint. Compare the 115 mA current rating and 7.5 Ohm on-resistance against alternative single-channel solutions to determine if the dual configuration offers sufficient system value. Validate that the 60 V breakdown voltage aligns with the maximum operating voltages present in the circuit.

Part Context

This component belongs to the broader 2N7002 family of N-channel MOSFETs widely used in general-purpose switching. While standard variants often utilize SOT-23 packages for single channels, this specific model integrates dual devices into an SOT-363-6 package. This configuration allows designers to reduce board space compared to using two separate single-channel transistors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternatives such as the 2N7002DW from onsemi or similar dual N-channel MOSFETs by strictly comparing pinouts, Rds(on), and current ratings against official datasheets.