ALD110800ASCL

ALD110800ASCL

$8.64
  • Description:MOSFET 4N-CH 10.6V 16SOIC
  • Series:EPAD®, Zero Threshold™

SKU:0f1d2a0c67db Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 10.6V 16SOIC
  • Series:EPAD®, Zero Threshold™
  • Mfr:Advanced Linear Devices Inc.
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel, Matched Pair
  • FET Feature:-
  • Drain to Source Voltage (Vdss):10.6V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:500Ohm @ 4V
  • Vgs(th) (Max) @ Id:10mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:2.5pF @ 5V
  • Power - Max:500mW
  • Operating Temperature:0°C ~ 70°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:16-SOIC
  • Grade:-
  • Qualification:-

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ALD110800ASCL

Overview

The ALD110800ASCL is a monolithic quad N-Channel MOSFET array manufactured by Advanced Linear Devices using EPAD CMOS technology. It features Zero-Threshold voltage with VGS(th) set at +0.00V ±0.02V and offset voltage (VOS) max of 10mV. Key electrical parameters include Drain-Source Breakdown Voltage (BVDSX) of 10.6V, continuous drain current of 3.0mA at VGS=+4.0V, and RDS(ON) of 500Ω at VGS=+4.0V or 104KΩ at VGS=0.0V. Input capacitance is 2.5pF, with turn-on/off delay times of 10ns. The device operates within a temperature range of 0°C to +70°C, dissipates up to 500mW, and is housed in a 16-SOIC package.

Feature Summary

  • Precision zero threshold voltage mode for minimal input-to-output level shift
  • Factory-matched MOSFET characteristics with tight lot-to-lot parametric control
  • Low input capacitance and low leakage currents for high impedance applications
  • Excellent thermal tracking due to monolithic construction

Applications

  • Very low voltage analog and digital circuits
  • Energy harvesting circuits
  • Precision current mirrors and sources
  • Analog switches and multiplexers
  • Sample and Hold circuits

Procurement Notes

Verify the component matches the specific ALD110800ASCL designation, which indicates the SOIC-16 package variant. Confirm RoHS compliance via the 'L' suffix if required by assembly specifications. Ensure handling procedures account for ESD sensitivity as noted in the datasheet. Cross-reference the manufacturer's ordering information to validate the correct package type against design requirements.

Selection Notes

Select this component for designs requiring precise matching between multiple N-Channel MOSFETs on a single chip. The zero threshold characteristic makes it suitable for ultra-low voltage operation where standard enhancement mode devices would fail to conduct properly. Consider the 104KΩ resistance at VGS=0V for passive resistor emulation needs. Verify that the 500mW power dissipation rating accommodates the thermal constraints of the target application environment.

Part Context

This part belongs to the EPAD® Matched Pair MOSFET Family from Advanced Linear Devices. It shares the core EPAD CMOS technology with variants like the ALD110900 series, differing primarily in channel count (quad vs. dual). The ALD110800A variant offers tighter offset voltage specifications compared to the standard ALD110800. All members utilize electrically programmable analog device technology for fixed threshold values.

Replacement Considerations

Direct replacements are limited within the same family; the ALD110800A offers improved offset voltage matching but requires verification of package compatibility. No other manufacturers produce identical zero-threshold matched quad arrays with these specific EPAD characteristics. Designers must evaluate circuit tolerance for variations in threshold voltage and offset if substituting with non-matched discrete MOSFETs.

ALD110800ASCLALD110800ASCL
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