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The ALD1101BSAL is a monolithic dual N-channel matched MOSFET pair manufactured using an enhanced ACMOS silicon gate process. It features a low threshold voltage of 0.7V and high input impedance of 10^12 ohms typical. The device offers a drain-source breakdown voltage of 10V, power dissipation of 500mW, and operates within a temperature range of 0°C to +70°C. Packaged in an 8-SOIC surface-mount format, it provides a DC current gain of 10^9.
Verify the specific grade suffix (B) against the datasheet specifications for offset voltage requirements. Confirm the SAL suffix indicates lead-free RoHS compliance and SOIC packaging. Ensure static control procedures are followed during handling due to ESD sensitivity.
Select this component when designing circuits requiring matched N-channel pairs with high DC beta and low input bias current. Consider the Vos grade based on required offset voltage accuracy. Verify that the 10V breakdown voltage meets system supply constraints.
This part belongs to the ALD1101 family of dual matched MOSFETs. It is designed to be used alongside P-channel counterparts like the ALD1102 to construct complementary CMOS analog switches or differential pairs.
Check for direct pin-compatible alternatives from Advanced Linear Devices such as the ALD1101ASAL or ALD1101SAL depending on the required offset voltage grade.