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The ALD1102APAL is a monolithic dual P-channel matched MOSFET pair manufactured using an enhanced ACMOS silicon gate process. It features enhancement-mode operation with a low threshold voltage of -0.7V and high input impedance of 10^12Ω. The device offers low offset voltage grades (2mV, 5mV, 10mV) and negative current temperature coefficient. Electrical characteristics include a drain-source breakdown voltage of -10V, on-resistance of 180Ω to 270Ω, and power dissipation of 500mW. It operates within a temperature range of 0°C to +70°C and is housed in an 8-pin Plastic DIP package.
Verify the specific grade suffix (A, B, or standard) required for your offset voltage specifications before ordering. Confirm that the 8-pin PDIP package aligns with your PCB footprint requirements. Ensure static control procedures are followed during handling due to ESD sensitivity. Check RoHS compliance status if manufacturing regulations require it.
Select the ALD1102A for the lowest offset voltage grade of 2mV, ALD1102B for 5mV, or the standard ALD1102 for 10mV. Consider the negative current temperature coefficient for thermal stability in precision circuits. Evaluate the low input capacitance requirements for high-speed switching applications. Ensure the -10V breakdown voltage meets your system's supply rail constraints.
The ALD1102 series includes variants such as ALD1102ASAL (SOIC-8) and ALD1102BPAL (PDIP-8). The 'PAL' suffix indicates a lead-free, RoHS-compliant 8-pin Plastic DIP package. Other family members like ALD1101 provide N-channel counterparts for complementary designs.
Direct substitutes may include other dual P-channel MOSFET pairs from Advanced Linear Devices or compatible CMOS processes. Verify pinout compatibility and electrical parameters such as Vgs(th) and Rds(on) when cross-referencing with generic discrete components.