ALD110800SCL

Overview

The ALD110800SCL is a monolithic quad N-Channel MOSFET array manufactured by Advanced Linear Devices using EPAD CMOS technology. It features precision zero threshold voltage mode with VGS(th) set at +0.00V ±0.02V and typical offset voltage of 3.8mV. The device operates in the 0°C to +70°C range within a 16-pin SOIC package. Key electrical parameters include nominal RDS(ON) of 104kΩ at VGS=0.00V, drain-source breakdown voltage of 10.6V, and power dissipation of 500mW. Input capacitance is typically 2.5pF, supporting low leakage and fast switching for small signal applications.

Feature Summary

• Precision zero threshold voltage mode eliminates input-to-output voltage level shift
• Factory-matched MOSFET characteristics with tight lot-to-lot parametric control
• Excellent temperature coefficient tracking due to monolithic chip construction
• High input impedance and low leakage currents suitable for nano-power designs

Applications

• Energy harvesting circuits
• Very low voltage analog and digital circuits
• Zero power fail safe circuits
• Backup battery circuits and power failure detectors
• Low level voltage clamp and zero crossing detectors

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and lead-free status. The 'SCL' designation corresponds to the 16-pin plastic SOIC package variant. Confirm that the required operating temperature range aligns with the standard commercial specification of 0°C to +70°C before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring precise threshold matching and minimal offset voltage in low supply environments. The zero-threshold characteristic allows operation at extremely low bias voltages, such as 0.2V. Ensure the application benefits from the high input impedance and low capacitance provided by the EPAD technology for optimal signal integrity.

Part Context

This device belongs to the EPAD Matched Pair MOSFET Family, which includes various threshold voltage options ranging from depletion to enhancement modes. The ALD110800 series specifically targets zero-threshold applications, distinguishing it from standard enhancement or depletion mode MOSFETs. It shares manufacturing technology with related parts like the ALD110900 but offers a quad configuration instead of dual.

Replacement Considerations

Direct replacements must match the zero-threshold specification and quad N-channel configuration. Verify compatibility with the 16-pin SOIC footprint. Alternative devices from the same EPAD family may offer different channel counts or threshold values but require circuit re-evaluation.

FAQ

What defines the zero-threshold characteristic of the ALD110800?

The zero-threshold characteristic means the gate threshold voltage (VGS(th)) is factory-set to +0.00V ±0.02V, defined as the point where IDS equals 1µA at VDS = 0.1V.

How does the ALD110800 handle temperature variations?

Due to being on the same monolithic chip, the matched pairs exhibit excellent temperature coefficient tracking, allowing for temperature-stable circuit designs without external compensation.

What is the typical offset voltage between matched MOSFETs?

The typical offset voltage (VOS) is 3.8mV, with a maximum specified value of 10mV for the ALD110800/ALD110900 variants.