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Product Detailed Parameters
- Description：MOSFET 2N-CH 10.6V 8PDIP
- Series：-
- Mfr：Advanced Linear Devices Inc.
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Matched Pair
- FET Feature：-
- Drain to Source Voltage (Vdss)：10.6V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：75Ohm @ 5V
- Vgs(th) (Max) @ Id：1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：500mW
- Operating Temperature：0°C ~ 70°C (TJ)
- Mounting Type：Through Hole
- Package / Case：8-DIP (0.300", 7.62mm)
- Supplier Device Package：8-PDIP
- Grade：-
- Qualification：-
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Overview
The ALD1101PAL is a monolithic dual N-channel matched MOSFET pair manufactured using an enhanced ACMOS silicon gate process. It features enhancement-mode operation with a typical threshold voltage of 0.7V and a maximum drain-source breakdown voltage of 10V. The device offers high input impedance, typically 10^12 ohms, and extremely low gate leakage current of 50pA at room temperature. Electrical characteristics include a maximum on-resistance of 75 ohms at VGS=5V and a maximum offset voltage of 10mV for the standard grade. Designed for +2V to +10V systems, it provides fast switching speeds and negative current temperature coefficients. The component is housed in an 8-pin plastic DIP package and operates within a temperature range of 0°C to +70°C.
Feature Summary
- Monolithic dual N-channel matched transistor pair designed for precision analog applications
- High input impedance and extremely low DC current loss through the control gate
- Matched for minimum offset voltage and differential thermal response
- Enhancement-mode operation suitable for low voltage systems
Applications
- Precision current mirrors and sources
- Analog switches and choppers
- Differential amplifier input stages
- Sample and hold circuits
Procurement Notes
Verify the specific ordering suffix to confirm the package type and temperature rating. The PAL suffix indicates an 8-pin plastic DIP package. Confirm RoHS compliance status as required by project specifications. Ensure static control procedures are followed during handling due to ESD sensitivity. Check lead-free designation if environmental regulations apply.
Selection Notes
Select the ALD1101PAL when low offset voltage and high matching accuracy are critical for circuit performance. Consider the ALD1101A or ALD1101B variants if tighter offset voltage grades (2mV or 5mV) are required compared to the standard 10mV grade. Evaluate the power dissipation limits and operating temperature range against system requirements. Ensure compatibility with the intended supply voltage range of +2V to +10V.
Part Context
The ALD1101 series consists of dual N-channel matched MOSFET pairs intended for broad analog applications. The ALD1101PAL specifically denotes the standard grade version in an 8-pin plastic DIP package. This component is part of a family that includes complementary P-channel devices like the ALD1102 for constructing CMOS analog switches. The technology utilizes an enhanced ACMOS silicon gate process to achieve high input impedance and low leakage.
Replacement Considerations
Direct replacements must match the dual N-channel configuration, 10V breakdown voltage, and 8-pin DIP package. Verify that substitute components offer comparable offset voltage and on-resistance specifications. Ensure the replacement supports the same operating temperature range and packaging style.
