ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.261A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：261mA (Ta)
- Rds On (Max) @ Id, Vgs：3Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.04nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
- Power - Max：330mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
Download product information
Overview
The Diodes Incorporated 2N7002DWK-13 is a dual N-channel enhancement mode MOSFET housed in an SOT-363 package. It features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 261mA at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as a maximum of 3.0Ω at VGS = 10V and 4.0Ω at VGS = 4.5V. Total power dissipation reaches 0.45W under specific mounting conditions, with a junction-to-ambient thermal resistance of 278°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration within a compact SOT-363 surface-mount package
- Low on-state resistance for high efficiency power management applications
- Integrated ESD protection and low input/output leakage characteristics
- Totally lead-free and fully RoHS compliant with halogen and antimony free materials
Applications
- Motor control circuits
- Power management functions
- High efficiency switching applications
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier quantity. Confirm compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure moisture sensitivity level 1 per J-STD-020 aligns with assembly requirements.
Selection Notes
Select this component when dual independent N-channel switches are required in a minimal footprint. The 60V rating suits low-voltage logic interfacing. Verify that the 3.0Ω RDS(ON) meets load requirements at the intended gate drive voltage of 10V or 4.5V.
Part Context
This part belongs to the 2N7002 family of small signal MOSFETs manufactured by Diodes Incorporated. Unlike single-channel variants, the DWK designation indicates a dual configuration in the SOT-363 package, offering space savings for designs requiring two isolated N-channel switches.
Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs in SOT-363 packages such as the BSS138 dual variant or equivalent parts from manufacturers like Nexperia or onsemi. Verify pinout compatibility and electrical parameters before substitution.
