2N7002E

$0.09

Description：60V 300MA 3@10V,500MA 225MW N CH
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a57b21343650 Category: Single FETs, MOSFETs Brand: Shenzhen Slkormicro Semicon Co., Ltd.

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Product introduction

Product Detailed Parameters

Description：60V 300MA 3@10V,500MA 225MW N CH
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002E

Overview

The 2N7002E is an N-Channel Power MOSFET manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a Drain-Source Voltage (BVDSS) of 60V and a continuous Drain Current (IDR) of 300mA. The device operates within a junction temperature range of -55°C to +150°C with a total device dissipation of 225mW at 25°C ambient temperature. Key electrical characteristics include a Gate Threshold Voltage (VGS(th)) ranging from 1.0V to 2.5V, a maximum Static Drain-Source On-State Resistance (RDS(ON)) of 3Ω at VGS=10V and 3.5Ω at VGS=5V, and an ESD rating of 1000V HBM.

Feature Summary

High power and current handling capability for demanding applications
Surface mount package design for space-saving integration
Lead-free product construction compliant with environmental standards

Applications

PWM applications
Load switch circuits
Power management systems

Procurement Notes

Verify the manufacturer designation as Shenzhen Slkormicro Semicon Co., Ltd. when sourcing this component. Confirm that the specific part number matches the 2N7002E identifier to ensure correct electrical ratings and pinout configuration. Cross-reference datasheet specifications against procurement requirements to validate performance suitability for the intended circuit design.

Selection Notes

Select this component based on its 60V breakdown voltage and 300mA continuous current capacity. Evaluate the RDS(ON) values at relevant gate drive voltages to determine conduction losses. Ensure the thermal resistance and power dissipation limits align with the system's operating environment and heat sinking capabilities for reliable long-term operation.

Part Context

This component belongs to the category of single FET N-Channel MOSFETs in the SOT-23 package. It serves as a small signal switching device suitable for low-power electronic circuits. The 2N7002E variant specifically denotes the Shenzhen Slkormicro Semicon Co., Ltd. manufacturing source within the broader family of similar N-channel enhancement mode field effect transistors.