2N7002E-T1-GE3

$0.56

Description：MOSFET N-CH 60V 240MA TO236
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2b49ba6bf22b Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 240MA TO236
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：21 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-236
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002E-T1-GE3

Overview

The Vishay Siliconix 2N7002E-T1-GE3 is a lead-free and halogen-free N-channel enhancement mode MOSFET housed in a TO-236 (SOT-23) package. It features a drain-source voltage of 60 V, a continuous drain current of 240 mA at 25 °C, and a maximum on-resistance of 3 Ω at VGS = 10 V. The device exhibits a typical gate threshold voltage of 2.5 V, an input capacitance of 25 pF, and a fast switching speed with a turn-on time of 7.5 ns.

Feature Summary

Halogen-free construction compliant with IEC 61249-2-21 definition
Low on-resistance for efficient power handling
Low threshold voltage enabling direct logic-level driving
Fast switching speed suitable for high-speed circuits

Applications

Direct logic-level interface to TTL/CMOS systems
Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
Battery operated systems
Solid-state relays

Procurement Notes

Verify the specific ordering suffix 'T1-GE3' against official documentation to confirm compliance with RoHS Directive 2002/95/EC and halogen-free status. Ensure the component matches the specified TO-236 (SOT-23) package dimensions and pinout configuration before integration into the design.

Selection Notes

Select this component when a low-offset voltage and low-error voltage are required for small-signal switching applications. Its low input capacitance and fast switching characteristics make it appropriate for high-speed circuits where rapid transitions are necessary without requiring additional buffer stages.

Part Context

This part belongs to the 2N7002E series of N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes standard silicon technology within a surface-mount SOT-23 package, designed for general-purpose switching tasks in compact electronic designs.

Replacement Considerations

The 2N7002E-T1-E3 serves as a verified substitute variant within the same product family, differing primarily in packaging or environmental certification details while maintaining identical electrical specifications.