2N7002H6327XTSA2

$0.12

Description：MOSFET N-CH 60V 300MA SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:677440cac0e7 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 300MA SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：20 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002H6327XTSA2

Overview

The Infineon Technologies 2N7002H6327XTSA2 is an N-channel enhancement-mode MOSFET in the OptiMOS™ small-signal transistor series. It features a 60 V drain-source breakdown voltage and a continuous drain current of 0.3 A at 25 °C, with a maximum on-state resistance of 4 Ω at VGS=4.5 V. The device supports fast switching with low gate charge and is avalanche rated for single-pulse energy handling up to 1.3 mJ. It operates within a temperature range of -55 °C to +150 °C and is housed in a PG-SOT-23 package.

Feature Summary

Enhancement mode operation with logic-level gate drive compatibility
Avalanche-rated capability for robust transient performance
Fast switching characteristics with optimized gate charge
Halogen-free construction compliant with IEC61249-2-21 standards

Applications

General-purpose signal switching
Load switching applications
High-side and low-side driver circuits

Procurement Notes

Verify the complete part number including the H6327 tape and reel suffix against official Infineon documentation to ensure correct packaging specifications. Confirm RoHS compliance and halogen-free status requirements align with project constraints before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a compact N-channel switch with moderate current handling capabilities. Evaluate thermal resistance and power dissipation limits relative to the specific ambient operating conditions. Ensure gate drive voltages remain within the specified ±20 V limit to maintain device integrity.

Part Context

This component belongs to the Infineon OptiMOS™ small-signal transistor family, designed for efficient switching in space-constrained applications. The 2N7002 variant specifically targets general-purpose uses where low on-resistance and fast response times are critical for system performance.

Replacement Considerations

Cross-reference pinout configurations and electrical parameters such as V(BR)DSS and RDS(on) when evaluating alternative suppliers. Verify that any substitute device meets the same PG-SOT-23 footprint and thermal management requirements.