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Product Detailed Parameters
- Description：MOSFET N-CH 60V 340MA SOT23
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The MCC 2N7002K-TP is an N-channel enhancement mode MOSFET housed in a SOT-23 package. It features a drain-source voltage of 60V and a continuous drain current of 0.34A at 25°C, with a maximum pulsed drain current of 1.36A. The device has a typical on-resistance of 2.5Ω at Vgs=10V and Id=500mA. Gate threshold voltage ranges from 1V to 2.5V. Total power dissipation is rated at 0.83W, supported by a thermal resistance of 150°C/W junction-to-ambient. Operating junction temperature spans -55°C to +150°C.
Feature Summary
- Voltage-controlled small signal switch design
- ESD protection up to 2kV (HBM)
- Halogen-free green device compliant with UL 94 V-0 flammability rating
Applications
- Voltage controlled switching circuits
- Power management systems
- Motor drive and control applications
Procurement Notes
Verify the authenticity of the 2N7002K-TP component through authorized MCC distributors or direct procurement channels. Counterfeit parts pose significant risks; ensure traceability and adherence to MCC quality standards for handling and storage. Confirm RoHS compliance and packaging specifications match the datasheet requirements before integration into production lines.
Selection Notes
Select this component for low-voltage switching applications requiring robust ESD protection and compact surface-mount packaging. The SOT-23 form factor suits space-constrained designs. Evaluate thermal performance against the 150°C/W junction-to-ambient resistance when designing heat dissipation strategies for continuous operation scenarios.
Part Context
This part belongs to the Micro Commercial Components discrete semiconductor portfolio, specifically within the N-channel MOSFET category. It serves as a standard small-signal switching solution compatible with general-purpose logic levels. The 'TP' suffix indicates tape-and-reel packaging configuration for automated assembly processes.
Replacement Considerations
Cross-reference with other 60V N-channel MOSFETs in SOT-23 packages. Verify pinout compatibility and electrical parameter overlaps such as Vds, Id, and Rds(on) before substitution. Ensure thermal characteristics and package dimensions align with existing PCB layouts.
